IEC 63284 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

International Electrotechnical Commission , 04/01/2022

Publisher: IEC

File Format: PDF

$47.00$95.00

Description

Standard By:International Electrotechnical Commission , 04/01/2022

Published:04/01/2022

Pages:30

ISBN(s):9782832211016

File Size:1 file , 970 KB

Language:English, French

Note:This product is unavailable in Ukraine, Russia, Belarus

This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

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